VDMOS
Huacan Electronics has a complete series of VDMOS products, the voltage covers the range of 75V ~ 500V. VDMOS has the advantages of both bipolar transistors and ordinary MOS devices. Compared with bipolar transistor, it has the advantages of fast switching speed, small switching loss, high input impedance, low driving power and so on. At the same time, it has a negative temperature coefficient, no bipolar power tube secondary breakdown problem, large safety work area.
IGBT
The new generation IGBT product series is designed and developed by Huacan Electronics. The product is developed using the latest international Trench FS/CSTBT technology, which has higher power density and is suitable for high-end electronic systems. Products cover 600V ~ 6500V, and can be customized according to customer requirements.
Radiation-hardened VDMOS
In cooperation with the Institute of Microelectronics of the Chinese Academy of Sciences, Huacan Electronics provides a full range of radiation-resistant VDMOS products to the aerospace sector. The products sold can effectively resist the impact of cosmic rays, can work stably in the extremely harsh environment of outer space.