Micro power consumption
Product Introduction:
The internal circuit of the micro-power Hall IC includes hall sensor, signal amplification and processing module, dynamic imbalance elimination module and latch module. These products are manufactured using the advanced BiCMOS process, which optimizes the overall circuit structure. CMOS output stage consumes much less current than the open leakage output IC, and achieves better working frequency. At the same time, the product adopts extremely miniaturized packaging process, making the product more extremely high performance and market advantages.
Micro power Hall IC | ||||||||
Product model | type | Working voltage | Static power | Working point | Release point | Sweep frequency | Working temperature | Packaging form |
Vdd(V) | Idd(uA) | Bop(GS) | Brp(GS) | Hz | ℃ | |||
HC6201 | All very | 2.3~5 | 3 | ±40 | ±32 | 45 | 150 | TO-92S SOT23-3 L |
HC6203 | All very | 2.3~5 | 2 | ±40 | ±32 | 5.5 | 150 | |
HC6204 | latch | 2.3~5 | 3 | 40 | -40 | 49 | 150 | |
HC6205 | latch | 2.3~5 | 5 | 40 | -40 | 5.5 | 150 | |
HC6206 | All very | 2.3~5 | 2 | ±20 | ±15 | 5.5 | 150 | |
HC6207 | All very | 2.3~5 | 3 | ±20 | ±15 | 40 | 150 | TO-92S SOT23-3L DFN1010 |
HC6207M | All very | 2~5 | 3 | ±20 | ±15 | 32 | 150 | |
HC6208 | switch | 2.5~5 | 75 | 30 | -30 | 2.4K | 150 | TO-92S SOT23-3L |
HC6209 | All very | 2.3~5 | 300 | ±40 | ±32 | 12K | 150 | |
HC6210 | All very | 2.3~5 | 5 | ±75 | ±67 | 45 | 150 | |
HC6211 | switch | 2.3~5 | 5 | 30 | 20 | 40 | 150 | TO-92S SOT23-3L TSOT23-3 DFN1010 DFN1216 SOT553 |
HC6213 | switch | 2.3~5 | 5 | 30 | 20 | 40 | 150 | |
HC7030 | All very | 1.8~5 | 4 | ±20 | ±15 | 40 | 150 | SOT23-3L |
HC7031 | All very | 1.8~5.5 | 4.9 | ±20 | ±15 | 33 | 150 | TO-92S SOT23-3L |