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Micro power consumption

Product Introduction:

The internal circuit of the micro-power Hall IC includes hall sensor, signal amplification and processing module, dynamic imbalance elimination module and latch module. These products are manufactured using the advanced BiCMOS process, which optimizes the overall circuit structure. CMOS output stage consumes much less current than the open leakage output IC, and achieves better working frequency. At the same time, the product adopts extremely miniaturized packaging process, making the product more extremely high performance and market advantages.

Micro power Hall IC
Product model type Working voltage Static power Working point Release point Sweep frequency Working temperature Packaging form
Vdd(V) Idd(uA) Bop(GS) Brp(GS) Hz  
HC6201 All very 2.3~5 3 ±40 ±32 45 150 TO-92S
SOT23-3 L
HC6203 All very 2.3~5 2 ±40 ±32 5.5 150
HC6204 latch 2.3~5 3 40 -40 49 150
HC6205 latch 2.3~5 5 40 -40 5.5 150
HC6206 All very 2.3~5 2 ±20 ±15 5.5 150
HC6207 All very 2.3~5 3 ±20 ±15 40 150 TO-92S
SOT23-3L
DFN1010
HC6207M All very 2~5 3 ±20 ±15 32 150
HC6208 switch 2.5~5 75 30 -30 2.4K 150 TO-92S
SOT23-3L 
HC6209 All very 2.3~5 300 ±40 ±32 12K 150
HC6210 All very 2.3~5 5 ±75 ±67 45 150
HC6211 switch 2.3~5 5 30 20 40 150 TO-92S
SOT23-3L
TSOT23-3
DFN1010
DFN1216
SOT553
HC6213 switch 2.3~5 5 30 20 40 150
HC7030 All very 1.8~5 4 ±20 ±15 40 150 SOT23-3L
HC7031 All very 1.8~5.5 4.9 ±20 ±15 33 150 TO-92S
SOT23-3L
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